BC857BV dual transistor (pnp) features z epitaxial die construction z complementary npn types available (bc847bv) z ultra-small surface mount package marking: k5v maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.1 a p c collector power dissipation 0.15 w r ja thermal resistance. junction to ambient air 833 /w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics(tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-1 a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -15 na dc current gain h fe v ce =-5v,i c =-2ma 220 475 v ce(sat)(1) i c =-10ma,i b =-0.5ma -0.1 v collector-emitter saturation voltage v ce(sat)(2) i c =-100ma,i b =-5ma -0.4 v v be(sat)(1) i c =-10ma,i b =-0.5ma -0.7 v base-emitter saturation voltage v be(sat)(2) i c =-100ma,i b =-5ma -0.9 v v be(1) v ce =-5v,i c =-2ma -0.6 -0.75 v base-emitter voltage v be(2) v ce =-5v,i c =-10ma -0.82 v transition frequency f t v ce =-5v,i c =-10ma,f=100mhz 100 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4.5 pf noise figure nf v ce =-5v,i c =-0.2ma, f=1khz,rs=2k ? ,bw=200hz 10 db sot-563 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
typical characteristics BC857BV www.htsemi.com semiconductor jinyu 2 date:2011/ 05
|
